METHOD FOR FORMING ANTENNA PATTERN OF SEMICONDUCTOR DEVICE FOR MONITORING PLASMA DAMAGE

摘要

PURPOSE: A method for forming an antenna pattern of a semiconductor device for monitoring plasma damage is to effectively perform the analysis of the characteristics while fabricating a TEG(Test element group) for analyzing a plasma damage. CONSTITUTION: A method for forming an antenna pattern of a semiconductor device for monitoring plasma damage comprises the steps of: forming an active region(20) of gate oxide in a semiconductor substrate; forming a source and a drain in the semiconductor substrate; forming a connection part(22) connected to the source and drain; and forming an antenna pattern having a charging path(26) and a gate(21) of polysilicon in a radial shape with respect to the connection part. A semiconductor device such as a transistor or a capacitor is placed at the center of antenna pattern or between the antenna patterns.