| 摘要 |
PURPOSE: A semiconductor laser diode is provided to maintain a single mode even at a high power. CONSTITUTION: In a semiconductor laser diode comprising a buffer layer(202), a first clad layer(203), a first optical waveguide layer(204), an active layer(205), a second optical waveguide layer(206), a second clad layer(207,209), and a cap layer(210) which are formed on a substrate(201), the second optical waveguide layer(206) has a thickness thinner than a predetermined thickness, and a third optical waveguide layer(208) having a predetermined thickness is inserted in the middle of the second clad layer. Accordingly, generation of spatial hole burning is restricted so that the single mode can be maintained even at a high power.
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