METHOD FOR PREVENTING DISLOCATION OF SEMICONDUCTOR DEVICE INCLUDING TRENCH ISOLATION

摘要

PURPOSE: A method for preventing a dislocation of a semiconductor device including a trench isolation is provided to prevent a dislocation in an edge portion of the trench isolation by reducing a stress given to the trench isolation, in which the stress is caused by an expanded volume of a silicon. CONSTITUTION: A method for preventing a dislocation of a semiconductor device including a trench isolation comprises the step of forming a plurality of sacrificial oxide layers on a semiconductor substrate having the trench isolation, in which at least one of a plurality of the sacrificial oxide layers is formed by a deposition process.