| 摘要 |
PURPOSE: An SRAM(static random access memory) device and a method for manufacturing the same are to minimize a thyristor capacity produced from a word line. CONSTITUTION: A substrate(100) is divided into an active region and an inactive region by an isolation film(102), and a gate(104) of an access transistor and a gate(106) of a drive transistor are formed on the substrate, the gates made of same conductive film. The first interlayer film(107) and a gate insulating film(111) of a PMOS TFT(thin film transistor) are deposited on the gates. Each of access transistors includes the first conductive film. A conductive film pattern(114) is formed on the gate insulating film, the pattern being used as an active region and a power line of the PMOS TFT. The second interlayer film(115) is deposited on the entire surface of the substrate. A word line(122) is formed on the second interlayer dielectric, and is connected to the gate of the access transistor through a contact hole exposing the gate of the access transistor. A number of bit lines(128) are formed on the second interlayer dielectric.
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