| 摘要 |
PURPOSE: A laser diode and a manufacturing method thereof are provided to improve the mode characteristics of the diode by eliminating crystal defects through the improved selective etching and improving the structure of the mesa. CONSTITUTION: In the laser diode, after the second growth of n-GaAs current limiting layer(45), a p-AlGalnP clad layer(47) is formed on the current limiting layer(45). This clad layer(47) forms a lower clad layer along after being connected to a p-AlGalnP clad layer(43) formed during the first growth. A GalnP active layer(48) is formed on the combined lower clad layer(47). And an n-AlGalnP clad layer(49), an n-AlGalnP clad layer(49), an n-GalnP buffer layer(50) and an n(+)-GaAs layer(51) are formed sequentially. An n-type electrode(62) and a p-ype electrode(61) are formed on the top and the bottom, respectively.
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