PHOTORESIST COMPOSITION HAVING EXCELLENT CHARACTERISTICS IN PRESENCE OF HIGH CONCENTRATION OF AMINE

摘要

PURPOSE: A photoresist composition excellent in resistance to post exposure delay and method for forming a photoresist pattern using the same are provided which can obtain the title fine pattern without special additive processes. CONSTITUTION: In a photoresist composition containing a photoresist polymer and a mixed organic solvent and a photoacid, the mixed organic solvent as a non-Newtonian solvent is (a) a ketone solvent selected from the group of cyclohexanone, isobuty methyl ketone, 2-heptanone, 3-heptanone, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopantanone, 2-methylcyclopentanone, 3-methylcyclohexanone, and 2,4-dimethylpentanone, (b) ethyl lactate or (c) 2-methoxyethyl acetate.