摘要 |
<p>A family of working liquids useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working liquids, and semiconductor wafers made according the foregoing process. The working liquid of the invention is a solution of initial components, the components comprising: an oxidizing agent; an ionic buffer; a passivating agent; a chelating agent selected from iminodiacetic acid and salts thereof; and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deployed over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working liquid; and c) relatively moving the wafer while the second material is in contact with the abrasive until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.</p> |