| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device wherein corrosion of a transfer channel region under thermal oxidation is reduced while drop of transfer efficiency of electric charges is suppressed. SOLUTION: A transfer channel region 13 formed in a semiconductor substrate 10, a gate insulating film 16 formed on the transfer channel region 13, and a transfer electrode 17 formed on the gate insulating film 16, are provided. Here, the gate insulating film 16 comprises an oxide film 16a formed by thermal- oxidation of the semiconductor substrate 10 and a nitride film 16b deposited on the oxide film 16a, with the film-thickness of the oxide film 16a being 7-30 nm while that of nitride film 16b 8-60 nm.
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