| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a read-out method and a memory by which a multi-level cell can be read out quickly and reliably. SOLUTION: Reading circuits 30, 31, 32 comparing the current flowing in a cell containing plural reference currents are not same mutually, but the compared current is made different and amplified. Especially, the reading circuit 32 relating to the minimum reference current IR3 amplifies a cell current of other reading circuits 30, 31 or more until reaching respective reference current 33c. Thereby, current dynamics is increased, read-out voltage can be kept at a low level. Thus, an intrinsic characteristic of the minimum reference current IR3 is near a characteristic of a memory cell distribution IM3 or in the characteristic, possibility of discrimination among different logic levels is reduced.</p> |
