| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having an excellent productivity and a semiconductor device with high yield. SOLUTION: In this manufacturing method, a metallic foil 31 and a semiconductor wafer 0 are adhered to a dicing tape 0 with a conductive substance 41 interposed, and the entire body is diced vertically and horizontally with a specified width to make a plurality of semiconductor chips 1. An insulation substance 5 is injected among the chips 1 for hardening, and another metallic foil 32 is provided on the connecting surface between the chip 1 and the metallic foil 31 of the insulation substance 5 and the opposite-side surface with another conductive substance 42, and then a part of the insulation substance 5 of which right and left sides are pinched by a plurality of semiconductor chips 1 is cut off. Thus, the semiconductor including a first metallic electrode 131 and a second metallic electrode 132 is formed individually. |
