发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To reduce power consumption by connecting an equalizing circuit and a pair of bit line, making a pair of bit line have an equal potential by using only the equalizing circuit and reducing a current from a pre-charge power source. SOLUTION: A pair of bit line is made to have an equal potential only by the means of an equalizing circuit. After write-in, the pair of bit line is made to have an potential equal to VDD/2 only by means of the equalizing circuit. Potential equalization of a pair of bit line is performed only by the equalizing circuit upto a read-out cycle set in a counter as for read-out after write-in. After that, pre-charge is performed to keep a potential being less than a half level of power source voltage. An equalizing signal is activated for the prescribed period, bit lines 4, 5 are put in conduction by an equalizing transistor and equalized to a potential of VDD/2. Next, a pre-charge signal for write-in is activated to prevent a lea, current, a pre-charge power source 6 is connected for write-in and the voltage level is stabilized to VDD/2.
申请公布号 JP2000251477(A) 申请公布日期 2000.09.14
申请号 JP19990050018 申请日期 1999.02.26
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KANEHARA AKINARI
分类号 G11C11/413;G11C11/41;(IPC1-7):G11C11/41 主分类号 G11C11/413
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