| 摘要 |
<p>An optoelectronic semiconductor diode is made from a layer of many small individual particles (2) containing doping junctions (10) positioned between two contact surfaces (6, 8) mechanically supported by substrates (4). In the preferred embodiment, the particles are formed of a semiconductor, such as indium gallium nitride, as the active region. The particles are of a size on the order of 10 to 100 microns and are formed by reacting metallic gallium and indium with ammonia, or by a similar method. Electrical contacts are made to the particles (2) by conductive films (6, 8) that have been deposited on the inner surfaces of the substrates (4). These contacts can be either reflective or transparent. The particles (2) each contain a p-n or similar junction (10), created either by diffusing in dopants or by selectively activating dopants that are already present. When a forward bias is applied to a so formed LED, minority carriers spill over the junction (10) and recombine with majority carriers, thus producing light. Powder LEDs according to the present invention can in principle be manufactured to operate on any wavelength within the visible spectrum.</p> |
