| 摘要 |
PROBLEM TO BE SOLVED: To detect the locations of the microscopic defects of insulating films formed on the side walls and bottom of a trench groove over the whole surface of a chip or wafer. SOLUTION: A silicon substrate 1 and metallic copper 2 are dipped as an anode and a cathode, respectively, in a solvent composed of methanol 3. Then a voltage is applied across the substrate 1 and copper 2 so that the substrate 1 may become a plus electrode and the copper 2 may become a minus electrode so as to precipitate metallic copper in the defective parts of an oxide film 12 by an electric field 5. The locations of the microscopic defects formed on the oxide film 12 are specified by setting the electric field 5 to a prescribed value between 3 MV/cm and 5 MV/cm and the applying duration of the voltage to a prescribed value within 10 minutes and 30 minutes.
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