| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve insulation property of an insulation layer between upper electrodes and lower electrodes, to prevent degradation of the insulation layer and to improve the yield by forming a conductive layer connected to at least one of the upper electrodes at least one side part outside plural lower electrodes. SOLUTION: A metal film for lower electrodes is formed on an insulating substrate 10. After the film formation, m stripes, n stripes oriented in a direction intersecting with the stripes on both their outsides, and rectangular or square patterns on the four corners of the substrate 10 are formed by means of etching. The m stripes are used as the lower electrodes 11, and two sets of the n stripes are used as upper electrodes and conductive layers 17 for allowing the charged particles to escape and flow into upper electrode path line films to the vessel wall of a film formation device in forming the upper electrode path line films. The two sets of the n stripes ultimately serve as part of the upper electrode path lines. The wiring width and interval of the m stripes and the two sets of the n stripes are ultimately defined according to the size and precision of a thin-film type electron source matrix to be formed.</p> |
