| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an integrated optoelectric transducer device and a manufacturing method thereof, where a crystalline silicon optoelectric transducer layer that is high in performance and accurately manufactured through a simple method is used. SOLUTION: An integrated optoelectric transducer device is of laminated structure equipped with a substrate 1, a first electrode layer formed on the substrate 1, a thin film optoelectric transducer unit 5 which includes a crystalline semiconductor layer which is formed as thick as 0.5 to 20μm on the first electrode layer, and a second electrode layer formed on the thin film unit 5. The laminated structure is separated into cells by a first separating groove which is provided extending from the second electrode layer to the substrate 1, each of the cells is separated into a first element and a first electrode lead-out part by a second separating groove provided to the second electrode layer and a part of the thin film unit 5, a lead-out electrode electrically connected to the first electrode is provided to the first electrode lead-out part, and the lead-out electrode is electrically connected to the second electrode layer of the element of the adjacent cell, by which the cells are connected in series and integrated together.</p> |
