发明名称 OVERCURRENT DETECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT INCORPORATING THE SAME
摘要 PROBLEM TO BE SOLVED: To improve the accuracy of the level of overcurrent detection and to extend the detection range of a detected current by compensating the temperature characteristic of an output transistor with the temperature characteristic of a reference circuit. SOLUTION: A reference voltage for overcurrent detection is generated by converting a constant current which is an output of a constant current source circuit 6, consisting of a plurality of diodes connected in series into a voltage by a current voltage conversion circuit 8. The reference voltage has a temperature characteristic which is proportional to the temperature characteristic of the diodes, to compensate for the temperature characteristic of an on-resistance of an output transistor, and the detected current range can be extended because the reference voltage is independent of a voltage drop of the diodes.
申请公布号 JP2000252804(A) 申请公布日期 2000.09.14
申请号 JP19990052232 申请日期 1999.03.01
申请人 NEC CORP 发明人 NAKAHARA AKIHIRO
分类号 H03K17/08;G05F3/04;G05F3/08;G05F3/16;H03K17/14;(IPC1-7):H03K17/08 主分类号 H03K17/08
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