| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device in which the flexibility of selection in a mask material is increased irrespective of the electric characteristic of the mask material itself, and in which an interlayer capacitance capable of preventing the short circuit of an interconnection with a contact due to the damage of a sidewall protective film can be reduced. SOLUTION: When a self-aligned contact part 19 in a buried interconnection is formed on a semiconductor substrate 10, a mask material 16 such as an amorphous Si mask material is used as a mask material used as a stopper film. Then, after the contact part is formed, the mask material is replaced with a silicon oxide film. The stopper film which is used as the mask material is formed at a low temperature of 550 deg.C or lower by a low-pressure chemical vapor deposition(LPCVD) operation. The mask material arranged on the buried interconnection is replaced with another material after a connecting interconnection is formed. Consequently, the electric characteristic of the mask material is not disregarded, and the degree of freedom of the selection of the material is increased. Consequently, a good embeddability is displayed even at a low temperature. |
