| 摘要 |
PROBLEM TO BE SOLVED: To improve the trade-off between forward characteristics and reverse characteristics by constituting the top part of a trench dug from one main surface of a semiconductor substrate, and starting with a region with higher impurity concentration while of the same conductive type as the bottom part and side wall part of the trench. SOLUTION: On an n+ substrate 31c of low resistance, an epitaxial wafer 31 where an n-epitaxial layer 31d is grown is used, and the n-epitaxial layer 31c of the wafer 31 is provided with a trench 35 dug from a main surface 31a. At the top part of the trench 35, a region 34 of higher impurity concentration with the same conductivity type as a bottom part 35a and side wall part of the trench 35 is formed. A molybdenum Schottky electrode 36 is allowed to contact the surface of impurity concentration region 34, and the bottom part 35a and sidewall part of the trench 35, and an anode electrode 39 of aluminum is laminated on the Schottky electrode 36. |
