发明名称 OPTOELECTRIC TRANSDUCER DEVICE AND PRODUCING METHOD THEREFOR
摘要 <p>PROBLEM TO BE SOLVED: To make it possible to fetch easily a first electrode and with high accuracy, by providing a fetch electrode composed of a conductive area formed by diffusing metals in a vertical direction of a thin film optoelectric transducer unit, which is connected electrically with a first electrode in a first electrode fetch area. SOLUTION: A fetch electrode 9 is formed by diffusing metals into an optoelectric transducer unit 5 from a metal film coated on the surface of the unit 5, in which a front-side electrode 6 in a back-side electrode (first electrode) fetch section is partially removed and exposed, and the fetch electrode 9 is connected to a back-side electrode 4. The surface of the exposed unit 5 is dug to the specified depth, and the metal film is formed therein. However, it does not necessarily remove the surface of the unit 5. When the metal film is coated on a polycrystal silicon layer and heat transtment is applied, metals are diffused in a vertical direction rather than a horizontal direction, and they reach easily the back-side electrode, and can form a low-resistance conductive area which is connected electrically with the back-side electrode.</p>
申请公布号 JP2000252502(A) 申请公布日期 2000.09.14
申请号 JP19990054229 申请日期 1999.03.02
申请人 KANEGAFUCHI CHEM IND CO LTD 发明人 NAKAJIMA AKIHIKO;NAKADA TOSHINOBU
分类号 H01L31/04;(IPC1-7):H01L31/04 主分类号 H01L31/04
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