| 摘要 |
PROBLEM TO BE SOLVED: To obtain an alignment mark used for alignment of a mask pattern in a semiconductor device manufacturing process, in which high diffraction efficiency and alignment of high accuracy can be obtained, even if a conductive film is as thick as a gate electrode film whose thickness is determined by the process conditions of a MOS semiconductor device. SOLUTION: This alignment mark is formed in a manner whereby a a first film (insulating film) 2 transparent to light for mask alignment is formed on the prescribed region of a semiconductor substrate, and a second film (conductive film) 4 which is formed like a diffraction grating pattern composed of islands and provided on the first film 2 to reflect the mask aligning light. This is obtained in a manner where a conductive film of the same component with a gate electrode is formed on a grooved element isolation region, and a primary diffracted light which does not interfere with reflected light from the conductive film 4 is extracted. |
