发明名称 Full page increment/decrement burst for ddr sdram/sgram
摘要 A graphics subsystem having a dual-data rate (DDR) synchronous dynamic random access memory (SDRAM)/synchronous graphic random access memory (SGRAM), which has a full-page increment/decrement burst mode. In one embodiment, the DDR SDRAM/SGRAM includes a memory array and a logic circuitry coupled thereto. The graphics subsystem may be formed on a single semiconductor chip. The memory array is addressable by even and odd word addresses. The logic circuitry has a burst increment mode to access the array starting at an even word address and a burst decrement mode to access the array starting at an odd word address.
申请公布号 AU3376900(A) 申请公布日期 2000.09.14
申请号 AU20000033769 申请日期 2000.02.25
申请人 MICRON TECHNOLOGY, INC. 发明人 KEVIN J. RYAN
分类号 G11C7/10;G11C8/12;G11C11/408 主分类号 G11C7/10
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