| 摘要 |
<p>PROBLEM TO BE SOLVED: To remarkably reduce internal inductance of a semiconductor element or a semiconductor device, by constituting a main circuit electrode and a main circuit conductor of a power semiconductor element of a metal block having a shape approximate to a square where necessary parts of the surface are insulated, or by arranging a metal block in a peripheral space of the main circuit electrode and the main circuit conductor. SOLUTION: A main circuit board 2 and eight MOSFET chips 3 are mounted on a square drain terminal 1, parts between a gate electrode 6 and gate electrodes of the MOSFET chips 3 are connected by using individual gate electrodes 7 and gate wires 8, in each chip. A source block conductor 5 as a metal block which has a size almost equal to the drain terminal 1 is mounted so as to cover the whole drain terminal 1. Although internal inductance exists in parts between sources and drains of the MOSFET's, the value of the internal inductance can be remarkably reduced by using the source block conductor 5 as the square metal block.</p> |
