A processing method of silicon epitaxial growth wafer and a processing apparatus thereof

摘要

The present invention relates to provide a method for the preparation of silicon epitaxial growth wafer in which a planarization process by down stream type plasma etching and an epitaxial layer growing process are carried out by series, further relates to a silicon epitaxial growth wafer preparing apparatus comprising a vacuum room in which a plasma planarization chamber by plasma etching, an epitaxial layer growing chamber, a wafer aligning chamber, a wafer load lock chamber and a wafer transferring robot are contained.