| 发明名称 |
TRENCH ISOLATION FOR ELECTRICALLY ACTIVE COMPONENTS |
| 摘要 |
The invention relates to a trench isolation for electrically active components, especially a flat trench isolation (shallow trench isolation) in e.g. crystalline silicon, and to a method for producing such a trench isolation. The aim of the invention is to reduce stress-related voltages. According to the invention, the junction between the trenches of the isolation and the side walls is rounded and is additionally provided with tapered side walls so that the angle between the bottom and the side walls is 75 DEG <a<90 DEG . |
| 申请公布号 |
WO0054326(A1) |
申请公布日期 |
2000.09.14 |
| 申请号 |
WO2000DE00716 |
申请日期 |
2000.03.07 |
| 申请人 |
INFINEON TECHNOLOGIES AG;UHLIG, INES;ZIMMERMANN, JENS;WEGE, STEPHAN |
发明人 |
UHLIG, INES;ZIMMERMANN, JENS;WEGE, STEPHAN |
| 分类号 |
H01L21/3065;H01L21/762;(IPC1-7):H01L21/762;H01L21/306 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
