发明名称 Input/output protection circuit having an SOI structure
摘要 An I/O protection circuit includes a P-channel MOS transistor connected between an input terminal and a power supply line, and an N-channel MOS transistor connected between the input terminal and a ground line. Gate electrodes of both the transistors are floated. The transistors may be replaced with gate diodes. Further, gate electrodes may be formed from the same layer as a gate electrode provided for field shielding.
申请公布号 US6118154(A) 申请公布日期 2000.09.12
申请号 US19970947345 申请日期 1997.10.08
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 YAMAGUCHI, YASUO;SATO, HIROTOSHI;INOUE, YASUO;IWAMATSU, TOSHIAKI
分类号 H01L27/04;H01L21/822;H01L27/02;H01L29/786;(IPC1-7):H01L23/60 主分类号 H01L27/04
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