| 摘要 |
Disclosed is a method of fabricating a semiconductor device for preventing occurrence of an inconvenience due to exposure of a high melting point metal based material, for example, contamination of a chamber atmosphere due to the metal material upon formation of a semiconductor layer in an opening portion by selective epitaxial growth or upon pre-treatment thereof, to reduce occurrence of crystal defects or the like, thereby forming semiconductor devices at a high yield. The method includes the steps of: forming a conductive layer including a high melting point metal based material on a substrate; forming an opening portion in the conductive layer; covering the high melting point metal based material with a film; and forming a semiconductor layer on a portion of the substrate exposed in the opening portion by epitaxial growth after the step of covering the high melting point metal based material with the film.
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