发明名称 Single crystal growing apparatus and single crystal growing method
摘要 The object of the present invention is to provide an apparatus and a method for preventing dropping of a single crystal having large diameter and heavy weight in a chamber with reduced pressure and for pulling it in reliable and safe manner. After a seed crystal 24a is immersed in Si melt in a quartz crucible 14, the seed crystal is pulled up, and a neck portion 1a with small diameter is formed under the seed crystal 24a, and a spherical constricted portion 1b is formed under the neck portion 1a, whereby a tip 23a of a single crystal support 23 is opened so that it does not come into contact with the constricted portion 1b under pulling operation. When a second neck portion 1c under the constricted portion 1b is moved up to a standby position of the tip 23a of the single crystal support 23, rotation of an upper chamber 12 is started, and a rotating shaft 22 is rotated clockwise, and the tip 23a of the single crystal support 23 is closed to grip a site under the constricted portion 1b and the single crystal support 23 is moved up at the same rate as that of the wire 3 by rotating a ball screw shaft 21.
申请公布号 US6117234(A) 申请公布日期 2000.09.12
申请号 US19980037512 申请日期 1998.03.10
申请人 SUPER SILICON CRYSTAL RESEARCH INSTITUTE CORP. 发明人 YAMAGISHI, HIROTOSHI
分类号 C30B15/30;(IPC1-7):C30B35/00 主分类号 C30B15/30
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