发明名称 PROCESSING METHOD OF SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To provide a processing method through which a monitoring silicon wafer that is recycled and becomes thin recovers its original thickness, males its surface reusable, and is increased in frequency of recycling. SOLUTION: A surface film 30 and metal contaminants on a used silicon wafer 10 (monitor wafers 10a to 10d) are removed, the surface of the wafer 10 is cleaned, and an epitaxial silicon film 40 is formed on the one surface of the silicon wafer 10 to increase the silicon wafer 10 in thickness. Thereafter, either of the surfaces of the silicon wafer 10 is polished, and the wafer 10 is cleaned and recycled to serve as a monitoring silicon wafer 50.
申请公布号 JP2000243801(A) 申请公布日期 2000.09.08
申请号 JP19990045202 申请日期 1999.02.23
申请人 HAMADA HEAVY INDUSTRIES LTD 发明人 TOMIMATSU YASUHIRO;KAWAZOE HIROSHI;KAWABE ICHIRO
分类号 H01L21/306;H01L21/02;H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/306
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