| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, having a structure which can reduce a bird's beak as an unwanted part existing in a LOCOS(local oxidation of silicon) oxide film, and can relatively widely secure an element region, and its manufacture. SOLUTION: In this manufacture, Si3N4 2 is grown on an Si substrate 1, and a mask Si3N4 2 is left behind, so as to plasma-etch it. Thereafter, a region excluding the region of the mask Si3N4 2 is oxidized, and PADSiO2 4 is formed, and Si3N4 is grown again. At this time, the film thickness of PADSiO2 4 is mode sufficiently smaller than the mask Si3N4 2. Then, it is etched back to form a sidewall 3, thereby being oxidized finally.
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