| 摘要 |
<p>The present invention provides methods and a system for uniformly etching substrates. Specifically, the method and system of the present invention provide for the non-immersive contact of the substrate to be etched with an etching composition comprising a fluoride ion source and a hydrogen ion source. By utilizing an etching composition comprising such elements, not only is the etching of traditional substrate materials, i.e., silicon oxide, improved, but the etching of substrate materials traditionally difficult to etch satisfactorily, i.e., silicon nitride, is made possible.</p> |
