发明名称 SEMICONDUCTOR SUBSTRATE HEATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To protect the inner wall of a chamber against contamination by a method, wherein a deposition preventive plate which comes into contact with neither of a chamber and a semiconductor substrate is provided is arranged facing toward the surface of the semiconductor substrate which confronts a heating lamp. SOLUTION: A deposition preventive plate 11 is arranged between a lamp 101 and a semiconductor substrate 103 in a chamber 14 coming into contact with neither of them. It is preferable that the deposition preventing plate 11 be formed of a material such as ceramic, which transmits infrared rays and is high in heat resistance. The deposition preventive plate 11 is arranged similarly, separated from a heat-resistant tray 13 by rods 105b implanted in the top surface of the heat-resistant tray 13 the same as the semiconductor substrate 103 is arranged. By this setup, in a step where the semiconductor substrate 103 is heated, heat rays radiated from the lamp 101 passing through the deposition preventive plate 11, and gas, scattering objects and the like generated by heating are blocked by the deposition preventive plate 11. As a result, the inner wall of the chamber 14 can be prevented from being contaminated.
申请公布号 JP2000243718(A) 申请公布日期 2000.09.08
申请号 JP19990046776 申请日期 1999.02.24
申请人 TOSHIBA CORP 发明人 ZAIHARA HIDENORI;OKAMOTO RINTARO
分类号 H01L21/26;(IPC1-7):H01L21/26 主分类号 H01L21/26
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