| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacture of a semiconductor device capable of forming a semiconductor device and a substrate contact on an SOI substrate by a simplified process. SOLUTION: This manufacture of a semiconductor device for forming a transistor on a substrate composed of a first semiconductor layer 1, an insulator layer 2 and a second semiconductor layer 3 has a step of forming an element isolation region 4 in the second semiconductor layer 3, a step of forming an opening reaching the first semiconductor layer 1 in the element isolation region 4, a step of forming a gate electrode 7 on the second semiconductor layer 3, a step of introducing impurities in the second semiconductor layer 3 and the opening to form a source/drain region 8 in the second semiconductor layer 3 and a high-concentration impurity diffused region 11 in the first semiconductor layer 2 (5), a step of forming an interlayer insulating film 9, and a step of forming a contact hole 10 in the interlayer insulating film 9. |
