发明名称 |
THIN FILM TRANSISTOR, MANUFACTURE THEREOF, LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME AND MANUFACTURE THEREOF |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a high-performance thin film transistor causing no problem in a driving circuit during display on a large screen and a liquid crystal display device using it, when a thin film transistor using polycrystalline silicon is used as a driving circuit part in the liquid crystal display device. SOLUTION: In a thin film transistor having a polycrystalline silicon thin film formed on a transparent insulating substrate 11 as an active region, crystal grain of the polycrystalline silicon thin film are grown anisotropically in a specific direction in the surface so as to make silicon crystal grains in a slender shape, and make the gate length direction of the thin film transistor approximately in parallel with the longitudinal direction of the crystal grains so that mobility of carriers in the active region (channel) of the TFT is improved.</p> |
申请公布号 |
JP2000243970(A) |
申请公布日期 |
2000.09.08 |
申请号 |
JP19990046228 |
申请日期 |
1999.02.24 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OGAWA KAZUFUMI;ADACHI KAZUYASU |
分类号 |
H01L21/20;G02F1/136;G02F1/1368;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|