发明名称 THIN FILM TRANSISTOR, MANUFACTURE THEREOF, LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME AND MANUFACTURE THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a high-performance thin film transistor causing no problem in a driving circuit during display on a large screen and a liquid crystal display device using it, when a thin film transistor using polycrystalline silicon is used as a driving circuit part in the liquid crystal display device. SOLUTION: In a thin film transistor having a polycrystalline silicon thin film formed on a transparent insulating substrate 11 as an active region, crystal grain of the polycrystalline silicon thin film are grown anisotropically in a specific direction in the surface so as to make silicon crystal grains in a slender shape, and make the gate length direction of the thin film transistor approximately in parallel with the longitudinal direction of the crystal grains so that mobility of carriers in the active region (channel) of the TFT is improved.</p>
申请公布号 JP2000243970(A) 申请公布日期 2000.09.08
申请号 JP19990046228 申请日期 1999.02.24
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OGAWA KAZUFUMI;ADACHI KAZUYASU
分类号 H01L21/20;G02F1/136;G02F1/1368;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L21/20
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