发明名称 |
METHOD FOR FORMING MICRO-GAP |
摘要 |
PROBLEM TO BE SOLVED: To easily form a micro-gap of high shape precision. SOLUTION: A conductive film 12 formed with a notch 13 having opposed two rims and a shape peaked at least from one rim to the other rim is deposited on a plate surface of an insulating substrate 11. Then the other side rim 14 of the conductive film 12 is removed with the surface layer of the under side substrate 11 so as to include the tip end of the notch 13. Thereby, even if a metal of high melting point is used as a conductive film material, an excellent micro-gap can be formed. In addition, a dicing blade in the thickness of easy handling is used to form the micro-gap easily.
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申请公布号 |
JP2000243533(A) |
申请公布日期 |
2000.09.08 |
申请号 |
JP19990037325 |
申请日期 |
1999.02.16 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
TANAKA YOSHIYUKI;SARUWATARI NOBUYA;SHIYATOU YASUHIRO;INABA HITOSHI;HARADA KOICHIRO;NAKAMOTO TAKAHIRO |
分类号 |
H01C7/12;H01T2/02;H01T4/10;(IPC1-7):H01T4/10 |
主分类号 |
H01C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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