Programmelement für die Redundanztechnik für Halbleiterspeichergerät und Verfahren zur Herstellung vom Halbleiterspeichergerät, das denselben beinhaltet

摘要

Improvement of a fuse for use in the redundancy technique particularly for a semiconductor memory device. The fuse is constituted by an MIS type transistor (150) having a gate insulating layer (107), which comprises at least two types of insulating films (102, 104, 106). Redundancy information is stored by shifting the threshold value of the MIS type transistor (150).