| 摘要 |
<p>A p type semiconductor layer (111), an i type amorphous photoelectric conversion layer (112) and an n type semiconductor layer (113) of an amorphous type photoelectric conversion unit (11) are formed in separate deposition chambers (1p, 1i and 1n), respectively. A p type semiconductor layer (121), an i type crystalline photoelectric conversion layer (122) and an n type semiconductor layer (123) of crystalline type photoelectric conversion unit (12) are formed continuously in one deposition chamber (2pin). Accordingly, a method of manufacturing a tandem type thin film photoelectric conversion device is obtained by which a tandem type thin film photoelectric conversion device having superior performance and high quality can be formed by a simple apparatus at a low cost with superior productivity. <IMAGE></p> |
