发明名称 System and method for detecting particles produced in a process chamber by scattering light
摘要 Particles generated within a semiconductor wafer process chamber are monitored by emitting a rastered laser beam into the process chamber and detecting a two-dimensional image of scattered radiant energy within the process chamber. A video frame representing a matrix array of pixel intensities is produced and processed by a processor. The processor receives first and second video frames, the first frame representing a matrix array of pixels of a background image of the process chamber before a wafer processing is started and the second frame representing a matrix array of corresponding pixels of a target image of the process changer after a wafer processing is started. Differential intensities between the pixels of the background image and corresponding pixels of the target image are detected and a decision is made on the detected intensities to produce an output signal representing presence or absence of the particles.
申请公布号 US6115120(A) 申请公布日期 2000.09.05
申请号 US19990413590 申请日期 1999.10.06
申请人 NEC CORPORATION 发明人 MORIYA, TSUYOSHI;UESUGI, FUMIHIKO;ITO, NATSUKO
分类号 G01N15/00;G01N15/02;G01N21/53;H01L21/66;(IPC1-7):G01N21/00 主分类号 G01N15/00
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