| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an abrasive which can polish a metal film for a circuiting material or a barrier metal at a rate necessary for the production of a semicon ductor device without causing a minute defect called scratch or a hollow called dishing on the surface of the metal film after polishing in a step for polishing a metal film for a circuiting material constituting a semiconductor device and does not cause troubles such as sedimentation of flocculation of abrasive particles during polishing treatment or storage, and to provide a polishing method using said abrasive. SOLUTION: This abrasive for the production of a semiconductor device comprises a resin particle comprising a polymer obtained by the emulsion polymerization of ethylenic unsaturated monomers using neither an emulsifier nor a dispersant, and an inorganic compound, and is used for the purpose of polishing a metal film. The method for polishing comprises a step using the abovementioned abrasive in a step for polishing a metal film in the production of a semiconductor device.</p> |
