SEMICONDUCTOR DEVICE HAVING SILICON OXYNITRIDE PROTECTIVE LAYER AND FABRICATION METHOD THEREOF

摘要

PURPOSE: A semiconductor device having a silicon oxynitride protective layer and fabrication method thereof is to allow a protective layer to have a low dielectric constant and high moisture resistance. CONSTITUTION: A method for fabricating a semiconductor device having a silicon oxynitride protective layer comprises the steps of: introducing a semiconductor substrate(100) having an insulating layer(102) and a metal pattern(104) orderly formed thereon into a reactor chamber having an ambient containing silane(SiH4) gas, N2O gas and ammonia gas(NH3); and reacting the SiH4, N2O and NH3 gases to form a silicon oxynitride protecting layer on the semiconductor substrate. The silicon oxynitride protecting layer has a dielectric constant of 5.0 to 6.0 and an atomic composition ratio of 25 to 40 wt% silicon, 25 to 40 wt% oxygen and 25 to 40 wt% nitrogen. The silicon oxynitride protecting layer is formed to a thickness of 3,000 Angstrom and over.