| 摘要 |
PROBLEM TO BE SOLVED: To increase the sputtering rate peculiar to a target and to improve productive efficiency by controlling the crystal orientation of a target provided with a face-centered cubic structure and controlling the plane orientation ratio to the value equal to or above a specified one. SOLUTION: The orientation ratio of (111)+(200)}/(220) plane in a metallic or alloy sputtering target provided with a face-centered cubic structure is controlled to >=2.20. The target material is preferably composed of silver or a silver alloy. The fact that the (111) and (200) planes orientate to the sputtering face of the sputtering target more preferentially than the (220) plane to increase the density of atmos to the sputtering face is utilized. As a result, the collision frequency with cations accelerated at the time of sputtering and proceeding to the target is made high, and the sputtering rate is inevitably be improved. In this way, the film forming time can be reduced while the film forming conditions by the sputtering are maintained.
|
