METHOD FOR VAPOR DEPOSITING BARRIER METAL OF CONTACT HOLE

摘要

PURPOSE: A method for vapor depositing barrier hole of contact hole is provided to save manufacturing costs as well as to prevent generation of void inside the contact hole. CONSTITUTION: A method for vapor depositing barrier hole of contact hole according to the present invention comprises the steps: a) vapor depositing an insulating layer on the top of lower metal circuit layer or silicone wafer and then selectively etching the insulating layer by photo-lithography to form a contact hole; b) vapor depositing barrier metal made of titanium layer/titanium nitride layer on the face of the insulating layer in which the contact hole is formed by sputtering method; c) annealing to form silicide for decreasing the contact resistance at the lower wall of the contact hole; d) vapor depositing a thick tungsten layer on the face of the insulating layer in which the contact hole is formed by chemical gas deposition method to reclaim the contact hole; and e) levelling the tungsten layer by chemical/mechanical grinding method to form a tungsten plug wherein the method is characterized in that the said barrier metal is formed by the process comprising vapor depositing titanium layer by sputtering and then forming titanium nitride layer on the surface of the titanium layer by nitrogen plasma treatment.