| 摘要 |
A ferroelectric thin film is subjected to heat treatment in an active oxygen atmosphere containing an oxidizing gas such as ozone, N2O, or NO2, thereby preventing occurrence of oxygen defects (oxygen vacancies) in the thin film, and avoiding a deterioration in dielectric characteristics, ferroelectric characteristics, and electric characteristics required for the ferroelectric thin film, such as a reduction in permittivity, an increase in leakage current, a reduction in remanent polarization, and an increase in coercive electric field. Thus, the ferroelectric thin film having stable characteristics can be formed. Further, a nonvolatile memory cell using this ferroelectric thin film as a capacitor is formed.
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