| 摘要 |
PURPOSE: A method for forming silicon oxynitride insulating layer is to shorten the process time and control a concentration of nitrogen to a desired level, thereby decreasing parasitic capacitance. CONSTITUTION: A method for forming silicon oxynitride insulating layer comprises the steps of: introducing a semiconductor substrate(100) having an insulating layer(102) and a metal pattern(104) orderly formed thereon into a reactor chamber having an ambient containing silane(SiH4) gas, N2O gas and ammonia gas(NH3); and reacting the SiH4, N2O and NH3 gases to form a silicon oxynitride protecting layer on the semiconductor substrate. The silicon oxynitride protecting layer has a dielectric constant of 5.0 to 6.0 and an atomic composition ratio of 25 to 40 wt% silicon, 25 to 40 wt% oxygen and 25 to 40 wt% nitrogen. The silicon oxynitride protecting layer is formed to a thickness of 3,000 Angstrom and over.
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