发明名称 |
Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode |
摘要 |
In a method for manufacturing an LCD device where a gate insulating layer is formed on an insulating substrate and a signal line pattern layer and a pixel electrode pattern layer are formed on a signal line forming area and a pixel electrode forming area, respectively, of the gate insulating layer, a part of the gate insulating layer between the signal line forming area and the pixel electrode forming area is etched.
|
申请公布号 |
US6114184(A) |
申请公布日期 |
2000.09.05 |
申请号 |
US19970962299 |
申请日期 |
1997.10.31 |
申请人 |
NEC CORPORATION |
发明人 |
MATSUMOTO, SEIICHI;SUKEGAWA, OSAMU;KANEKO, WAKAHIKO;IHARA, HIROFUMI |
分类号 |
G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
G02F1/136 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|