发明名称 Method for manufacturing LCD device capable of avoiding short circuit between signal line and pixel electrode
摘要 In a method for manufacturing an LCD device where a gate insulating layer is formed on an insulating substrate and a signal line pattern layer and a pixel electrode pattern layer are formed on a signal line forming area and a pixel electrode forming area, respectively, of the gate insulating layer, a part of the gate insulating layer between the signal line forming area and the pixel electrode forming area is etched.
申请公布号 US6114184(A) 申请公布日期 2000.09.05
申请号 US19970962299 申请日期 1997.10.31
申请人 NEC CORPORATION 发明人 MATSUMOTO, SEIICHI;SUKEGAWA, OSAMU;KANEKO, WAKAHIKO;IHARA, HIROFUMI
分类号 G02F1/136;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/84 主分类号 G02F1/136
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