METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to improve the uniformity of thickness of a metal thin film when the metal thin film is formed by ion metal plasma sputtering method, and the uniformity between wafers. CONSTITUTION: A method for manufacturing semiconductor devices mounts plural sheets of wafers(23) in which various for forming semiconductor devices are formed on an ion metal plasma(IMP) equipment(20). A direct bias(24) applied to a target(21) of the IMP equipment(20) is shut, and a high frequency applied to a high frequency coil(22) and an alternating bias(25) applied to the wafers(23) are then applied to remove a metal thin film deposited on the high frequency coil(22). Then, ions of the target(21) are sputtered by applying all of the direct bias applied to the target, the high frequency applied to the high frequency coil and the alternating bias applied to the wafers, thus forming a metal thin film on the wafer(23).