发明名称 |
MAGNETORESISTIVE STRUKTUR MIT EINER LEGIERUNGSSCHICHT |
摘要 |
A magnetoresistive layered structure having on a substrate two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate of less than 50 ANGSTROM thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses. |
申请公布号 |
DE69518146(D1) |
申请公布日期 |
2000.08.31 |
申请号 |
DE1995618146 |
申请日期 |
1995.01.18 |
申请人 |
NONVOLATILE ELECTRONICS, INC. |
发明人 |
DAUGHTON, M. |
分类号 |
H01F10/30;G01R33/09;G11B5/39;H01F10/08;H01F10/32;H01L21/8246;H01L27/22;H01L43/08;H01L43/10;(IPC1-7):H01F1/00;B32B15/20;B32B9/00;G01R33/02;G11B5/33;B32B15/18;G11B5/127 |
主分类号 |
H01F10/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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