发明名称 MAGNETORESISTIVE STRUKTUR MIT EINER LEGIERUNGSSCHICHT
摘要 A magnetoresistive layered structure having on a substrate two or more magnetoresistive, anisotropic ferromagnetic thin-films each two of which are separated by an intermediate layer on a substrate of less than 50 ANGSTROM thickness formed of a substantially nonmagnetic, conductive alloy having two immiscible components therein. A further component to provide temperature stability in some circumstances is to be at least partially miscible in the first two components. Such structures can be formed as a sensor by having them electrically connected together with one positioned in a gap between magnetic material masses and one shielded by one of such masses.
申请公布号 DE69518146(D1) 申请公布日期 2000.08.31
申请号 DE1995618146 申请日期 1995.01.18
申请人 NONVOLATILE ELECTRONICS, INC. 发明人 DAUGHTON, M.
分类号 H01F10/30;G01R33/09;G11B5/39;H01F10/08;H01F10/32;H01L21/8246;H01L27/22;H01L43/08;H01L43/10;(IPC1-7):H01F1/00;B32B15/20;B32B9/00;G01R33/02;G11B5/33;B32B15/18;G11B5/127 主分类号 H01F10/30
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