发明名称 |
Method for programming and erasing a triple-poly split-gate flash |
摘要 |
A method of programming and erasing a triple-poly split-gate flash memory. The memory cell is programmed by substrate hot-electron injection and erased by the tunneling effect and an inversion layer near the drain region. Such programming/erasing procedures can achieve uniform injection with low programming current and high injection efficiency.
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申请公布号 |
US6111788(A) |
申请公布日期 |
2000.08.29 |
申请号 |
US19990382078 |
申请日期 |
1999.08.24 |
申请人 |
WORLDWIDE SEMICONDUCTOR CORP. |
发明人 |
CHEN, CHIH-MING;CHI, MIN-HWA |
分类号 |
G11C16/10;G11C16/14;(IPC1-7):G11C16/04 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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