| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide single crystal production process by which an oxide single crystal can be produced at a low cost. SOLUTION: This production process comprises: dry-blending powdery Ga and an oxide compound together to obtain a raw material mixture 3 consisting of them; firing the raw material mixture 3; thereafter, forming Ga2O3 in the raw material mixture 3 and concurrently producing a crystal powder 5; and performing the pulling-up of an oxide single crystal with the crystal powder 5 as a melt by a Czochralski method, wherein the crystal powder 5 is powdery La3Ta0.5Ga5.5O14, La3Ga5SiO14 or La3Nb0.5Ga5.5O14.
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