| 摘要 |
PROBLEM TO BE SOLVED: To form an element forming region in a shallow trench isolation process per designed dimension. SOLUTION: This method includes a step for forming successively an insulation film 13 and a antireflection film (its pattern 14a) over the entire surface of one main plane of a semiconductor substrate 10, a step for forming a photoresist film having a prescribed pattern 15a on the antireflection film, a step for forming a hardening layer 18a on the surface of the photoresist film through ion implantation, a step for successively patterning the antireflection film and insulation film 13 through anisotropic etching, and a step for forming a groove in the substrate 10 through anisotropic etching using the patterned insulation film as a mask.
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