发明名称 |
Magnetoresistance effect device, and magnetoresistance effect type head, memory device, and amplifying device using the same |
摘要 |
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.
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申请公布号 |
US6111782(A) |
申请公布日期 |
2000.08.29 |
申请号 |
US19990270647 |
申请日期 |
1999.03.16 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SAKAKIMA, HIROSHI;IRIE, YOUSUKE;SATOMI, MITSUO;KAWAWAKE, YASUHIRO |
分类号 |
G01R33/09;G06K19/06;G11B5/39;G11C11/14;G11C11/15;G11C11/16;G11C11/56;H01F10/08;H01F10/12;H01F10/13;H01F10/14;H01F10/16;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L43/10;H03F7/02;H03F15/00;(IPC1-7):G11C11/00 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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